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​ Profile of Dr. Toshihiko Makino
​   Dr. Makino has contributed to the technology of the Distributed Feedback (DFB) laser diodes from the early research period to the wide market deployment. He designed the 1.5μm-band InGaAsP  strained-layer quantum well DFB  laser diodes at Nortel in the early 1990s, which is one of the first products in the world for 2.5 Gb/s optical fiber communication systems. He also designed the 1.3 μm-band uncooled AlGaInAs DFB laser diodes for the access network applications.
​    He is internationally recognized for his pioneering work on the unique gain-coupled DFB laser diode consisting of the periodically etched quantum wells. This laser achieved 3dB modulation bandwidth of 22 GHz with 10 mW output power (one of the highest bandwidths in 1993). 
    He developed a general theoretical model that combines the transfer-matrix method with the amplified spontaneous emission, which can model the lasing spectrum of multi-section laser diode structures.  
    He contributed to a number of paper publications, presentations and invited talks in international conferences, book chapters, and patents. With his contributions, he was selected as an IEEE Fellow (now  Life  Fellow).
    He took senior management positions at Nortel, Fujitsu, and other start-up companies, including CTO and VP. He helped several companies as a consultant for design and modeling of DFB laser diodes.
Education 
    B. Electrical Engineering: Kyoto University, Japan, 1970.
    M. Electronics Engineering: Kyoto University, Japan, 1973.
    Doctor of Engineering (equivalent to Ph. D.), Japan, 1980.
 The title of the doctor thesis is, "A study of microwave solid-state oscillators: frequency stabilization and power combination".  This was a part of the local oscillator (frequency of 12 GHz) for SHF to UHF down converters,  which was developed at Panasonic for the first Satellite TV broadcasting in Japan.     
Technical Strength

  • DFB laser diode design from quantum well design to grating design.
  • Theoretical models of DFB laser diodes.
  • High speed optoelectronic devices such as DFB diode lasers and electro-absorption modulator integrated DFB laser diode (up to 40 GHz). ​​


Background